Mr. Marius Knapp

Mr. Marius Knapp |Clyto Access

Fraunhofer Institute for Applied Solid States Physics (IAF), Germany

Speaker

Expertise: research interests---CVD of graphene

Biography:

Marius Knapp studied Physics and Economics with focus on semiconductor and solid state physics at the University of Freiburg, Germany. His research activities started as an undergraduate student at Fraunhofer Institute for Solar Energy Systems (ISE) with the focus on the CVD (chemical vapor deposition) fabrication of silicon thin-film solar cells. After graduation in 2014, he currently works as a postgraduatedoctoral candidate in the Department of Emerging Materials at the Fraunhofer Institute for Solid States Physics (IAF) in Freiburg. His research interests focus on the CVD of graphene and its mechanical wet transfer on aluminum nitride (AlN) and aluminum scandium nitride (AlScN), as well as its potential application in electronic devices and microelectro-mechanical systems, such as bulk acoustic wave devices.

Presentation:

Title: Large-Area Graphene Wet Transfer on AlN – wettability investigations

Abstract:

Graphene with its two-dimensionaland virtually massless character attracts great interest as an alternative electrode material in various research areas, e.g. sensors, radio frequency filters and photovoltaics. With respect to its eco-friendliness and biocompatibility it is even applicable to the medical sector. Regarding the wafer-scale graphene synthesis method via the chemical vapor deposition, which was developed and highly optimized during the last years, a subsequent transfer of the graphene monolayer from the metal growth substrate, i.e. mainly used copper foil, is inevitable. Based on the wet transfer technique, which is already well-engineered for silicon dioxide (SiO2) target substrates, we present an optimized wet transfer technique on aluminum nitride (AlN). Investigations on AlN substrates reveal highly different surface properties compared to SiO2 regarding its wettability, indicated by contact angle measurements.This strongly influences the quality of transferred graphene monolayers due to physical and chemical effects. A surface plasma pretreatment of the target substrate is able to control the surface properties and ensures a controlled desiccation process due to a both physical and chemical surface termination. As a result of this, transfer induced cracks can be significantly minimized and layer stress is reduced, as spatially resolved Raman spectroscopy reveals. In this talk, an optimization of the floating transfer of 40 x 40 mm² graphene sheets is presented. Sheet resistances down to 350 ?/sq. were achieved for graphene on AlN [1].The development of the graphene wet transfer on different semiconductor materials towards wafer-scale technologies opens a new range of applications for graphene as an eco-friendly and cheaper replacement for conventional electrode materials.

Related Conferences :

2nd world summit on Nanotechnology and Nanomedicine Research